منابع مشابه
Design and Fabrication of a 911 GHz Balanced Low Noise Amplifier Using HJFET
This paper describes the design of an X-band balanced low noise amplifier (LNA) using an available HJFET device. The balanced LNA consists of a pair of electrically similar transistors whose input and output signals are divided or combined by 3 dB two-stage Wilkinson power dividers. The proposed balanced LNA is fabricated and measured. The measured results show that the noise figure is 1.30 dB ...
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This paper presents the design, fabrication and performance of a three-stage 155GHz monolithic low noise amplifier (LNA) using 0.1 -pm pseudomorphic (PM) InAIAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 155 GHz, and more than 10 dB gain from 151 to 156 GHz. When this amplifier is biased for low noise figure, a noise figure of 5.1 dB with associ...
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This paper describes a 1.9 GHz, 25 mW , 0.25 μm CMOS Low Noise Amplifier (LNA), intended for use in a DECT (Digital Enhanced Cordless Communications) Receiver. The LNA has been simulated with Cadence Spectre and the results show that it provides a gain of more than 15 dB, for a noise figure of 2dB, and an input referred IP3 of −5dBm. We present the LNA architecture and the circuit analysis alon...
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This paper presents a design of 2.4 GHz low noise amplifier (LNA) for wireless sensor network (WSN) applications using CMOS 0.13 μm Silterra process. The proposed LNA employs a self-biased inverter to obtain high gain and able to operate at low supply voltage. The simulation results indicated that the proposed LNA achieves an input return loss (S11) of -37.7 dB, output return loss (S22) of -28....
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ژورنال
عنوان ژورنال: SCITECH Nepal
سال: 2018
ISSN: 2091-1742
DOI: 10.3126/scitech.v13i1.23500